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january 2012 doc id 022702 rev 1 1/15 15 STB80NF55-06T n-channel 55 v, 5 m , 80 a stripfet? ii power mosfet in a d2pak package features exceptional dv/dt capability applications switching application automotive description this power mosfet has been developed using stmicroelectronics? unique stripfet process, which is specifically designed to minimize input capacitance and gate charge. this renders the device suitable for use as primary switch in advanced high-efficiency isolated dc-dc converters for telecom and computer applications, and applications with low gate charge driving requirements. figure 1. internal schematic diagram order code v dss r ds(on) max. i d STB80NF55-06T 55 v < 6.5 m 80a d2pak 1 3 ta b !-v $4!"or ' 3 table 1. device summary order code marking package packaging STB80NF55-06T b80nf55-06t d2pak tape and reel www.st.com
contents STB80NF55-06T 2/15 doc id 022702 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
STB80NF55-06T electrical ratings doc id 022702 rev 1 3 /15 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 55 v v gs gate- source voltage 20 v i d (1) 1. current limited by package. drain current (continuous) at t c = 25 c 80 a i d (1) drain current (continuous) at t c = 100 c 80 a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 3 20 a p tot total dissipation at t c = 25 c 3 00 w p 1 long term load test (i d = 100 a, v sd = 15 v, t pulse =10 msec) v sd (tested) 150 w p 2 ( 3 ) 3 . guaranteed by process. short term load test (i d = 75 a, v sd = 15 v, t pulse =700 msec) v sd (not tested) 1125 w derating factor 2 w/c dv/dt (4) 4. i sd 80 a, di/dt 3 00 a/s, v dd =v( br)dss , t j t jmax peak diode recovery avalanche energy 7 v/ns e as (5) 5. starting t j = 25 c, i d = 3 0 a, v dd = 3 0 v single pulse avalanche energy 1. 3 j t stg storage temperature -55 to 175 c t j max. operating junction temperature table 3. thermal data symbol parameter value unit rthj-case thermal resistance junction-case max. 0.5 c/w rthj-pcb (1) 1. when mounted on 1 inch2 fr4 2 oz cu. thermal resistance junction-to pcb max. 3 5c/w
electrical characteristics STB80NF55-06T 4/15 doc id 022702 rev 1 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs =0 55 v v br0 v gs = 1.5 v, i d = 250 a 40 v v br1 v gs = 1.5 v, i d = 10 ma 40 v v br2 v gs = 1.5 v, i d = 100 ma 40 v i dss zero gate voltage drain current (v gs = 0) v ds = 55 v v ds = 55 v, t c = 125 c 10 100 a a i gss (1) 1. tested @v gs = 22 v at wafer level. gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v v gs(th) (2) 2. guaranteed by process. tj=175 c, v ds = v gs i d = 1 ma 1v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 40 a 5.0 6.5 m table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 - 4400 1020 3 50 pf pf pf t d(on) t r t d(off) t f tu r n - o n d e l ay t i m e rise time turn-off delay time fall time v dd = 27 v, i d = 60 a r g =4.7 v gs = 10 v (see figure 13 ) - 27 155 125 65 ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 44 v, i d = 80 a, v gs = 4.5 v, r g = 10 (see figure 14 ) - 142 29 60.5 19 3 nc nc nc
STB80NF55-06T electrical characteristics doc id 022702 rev 1 5/15 table 6. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 80 3 20 a a v sd (2) 2. pulsed: pulse duration = 3 00 s, duty cycle 1.5% forward on voltage i sd = 80 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 80 a, di/dt = 100 a/s, v dd = 3 5 v, t j = 150 c (see figure 15 ) - 100 0. 3 2 6.5 ns nc a
electrical characteristics STB80NF55-06T 6/15 doc id 022702 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized bv dss vs. temperature figure 7. static drain-source on-resistance
STB80NF55-06T electrical characteristics doc id 022702 rev 1 7/15 figure 8. gate charge vs. gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs. temperature figure 11. normalized on-resistance vs. temperature figure 12. source-drain diode forward characteristics
test circuit STB80NF55-06T 8/15 doc id 022702 rev 1 3 test circuit figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am01473v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STB80NF55-06T package mechanical data doc id 022702 rev 1 9/15 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STB80NF55-06T 10/15 doc id 022702 rev 1 table 7. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.0 3 0.2 3 b0.70 0.9 3 b2 1.14 1.70 c0.45 0.60 c2 1.2 3 1. 3 6 d8.95 9. 3 5 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1. 3 01.75 r0.4 v2 0 8
STB80NF55-06T package mechanical data doc id 022702 rev 1 11/15 figure 19. d2pak (to-263) drawing figure 20. d2pak footprint (a) a. all dimensions are in millimeters 0079457_ s 16.90 12.20 9.75 3.50 5.0 8 1.60 footprint
packing mechanical data STB80NF55-06T 12/15 doc id 022702 rev 1 5 packing mechanical data table 8. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 33 0 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 1 3 .2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 3 0.4 p0 3 .9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t0.25 0. 3 5 w2 3 .7 24. 3
STB80NF55-06T packing mechanical data doc id 022702 rev 1 1 3 /15 figure 21. tape for d2pak (to-263) figure 22. reel for d2pak (to-263) p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us b1 for m a chine ref. only incl u ding dr a ft a nd r a dii concentric a ro u nd b0 am0 88 52v1 top cover t a pe a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
revision history STB80NF55-06T 14/15 doc id 022702 rev 1 6 revision history table 9. revision history date revision changes 19-jan-2012 1 first issue.
STB80NF55-06T doc id 022702 rev 1 15/15 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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